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| P-Channel Enhancement Mode Field Effect Transistor FEATURES -60V, -14A, RDS(ON) =125m @VGS = -10V. RDS(ON) =175m @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 package. D CEP20P06/CEB20P06 D G G D S S CEB SERIES TO-263(DD-PAK) G CEP SERIES TO-220 S ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous @ TC = 25 C @ TC = 100 C Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C - Derate above 25 C Operating and Store Temperature Range Tc = 25 C unless otherwise noted Symbol Limit VDS VGS ID IDM PD TJ,Tstg -60 Units V V A A A W W/ C C 20 -14 -10 -56 50 0.33 -55 to 175 Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol RJC RJA Limit 3 62.5 Units C/W C/W Details are subject to change without notice . 1 Rev 3. 2010.Nov http://www.cetsemi.com Electrical Characteristics Parameter Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics b Gate Threshold Voltage Static Drain-Source On-Resistance Dynamic Characteristics c Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics c Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage b CEP20P06/CEB20P06 Tc = 25 C unless otherwise noted Symbol BVDSS IDSS IGSSF IGSSR VGS(th) RDS(on) Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd IS VSD VGS = 0V, IS = -14A VDS = -30V, ID =-3.7A, VGS = -10V Test Condition VGS = 0V, ID = -250A VDS = -48V, VGS = 0V VGS = 20V, VDS = 0V VGS = -20V, VDS = 0V VGS = VDS, ID = -250A VGS = -10 V, ID = -9A VGS = -4.5V, ID = -7A -1 105 140 615 140 45 11 4.5 50 15 17 2 4 -14 -2 22 9 100 30 22 Min -60 -1 100 -100 -3 125 175 Typ Max Units V A nA nA V m m pF pF pF ns ns ns ns nC nC nC A V VDS = -30V, VGS = 0V, f = 1.0 MHz VDD = -30V, ID = -1A, VGS = -10V, RGEN = 6 Drain-Source Diode Characteristics and Maximun Ratings Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature. b.Pulse Test : Pulse Width < 300s, Duty Cycle < 2%. c.Guaranteed by design, not subject to production testing. 2 CEP20P06/CEB20P06 15 -VGS=10,6,5,4.5,4V 25 25 C -ID, Drain Current (A) -ID, Drain Current (A) 12 -VGS=3.5V 9 6 3 0 20 15 10 5 0 -VGS=3.0V TJ=125 C 0 1 2 3 -55 C 4 5 0 1 2 3 4 5 -VDS, Drain-to-Source Voltage (V) Figure 1. Output Characteristics 1200 1000 800 600 400 200 0 Crss 0 6 12 18 24 30 Coss 2.2 1.9 1.6 1.3 1.0 0.7 0.4 -100 -VGS, Gate-to-Source Voltage (V) Figure 2. Transfer Characteristics ID=-3.7A VGS=-10V Ciss RDS(ON), Normalized RDS(ON), On-Resistance(Ohms) C, Capacitance (pF) -50 0 50 100 150 200 -VDS, Drain-to-Source Voltage (V) Figure 3. Capacitance 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50 VDS=VGS TJ, Junction Temperature( C) Figure 4. On-Resistance Variation with Temperature -IS, Source-drain current (A) VGS=0V 10 1 VTH, Normalized Gate-Source Threshold Voltage ID=-250A 10 0 -25 0 25 50 75 100 125 150 10 -1 0.4 0.6 0.8 1.0 1.2 1.4 TJ, Junction Temperature( C) Figure 5. Gate Threshold Variation with Temperature -VSD, Body Diode Forward Voltage (V) Figure 6. Body Diode Forward Voltage Variation with Source Current 3 CEP20P06/CEB20P06 -VGS, Gate to Source Voltage (V) 10 V =-30V DS ID=-3.7A 10 2 -ID, Drain Current (A) 8 6 4 2 0 RDS(ON)Limit 10 1 100ms 1ms 10ms DC 10 0 0 6 12 18 24 10 -1 TC=25 C TJ=175 C Single Pulse -1 10 10 0 10 1 10 2 Qg, Total Gate Charge (nC) Figure 7. Gate Charge VDD t on V IN VGS RGEN G RL D VOUT td(on) VOUT -VDS, Drain-Source Voltage (V) Figure 8. Maximum Safe Operating Area toff tr 90% td(off) 90% 10% tf 10% INVERTED 90% S VIN 50% 10% 50% PULSE WIDTH Figure 9. Switching Test Circuit Figure 10. Switching Waveforms r(t),Normalized Effective Transient Thermal Impedance 10 0 D=0.5 0.2 10 -1 0.1 0.05 0.02 0.01 Single Pulse PDM t1 t2 10 -2 1. RcJC (t)=r (t) * RcJC 2. RcJC=See Datasheet 3. TJM-TC = P* RcJC (t) 4. Duty Cycle, D=t1/t2 10 -2 10 -1 10 0 10 1 10 2 10 3 10 4 Square Wave Pulse Duration (msec) Figure 11. Normalized Thermal Transient Impedance Curve 4 |
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